Due to the increasing complexity of semiconductor device structure, there is a growing demand for hear-treatment processes that targets surface layer of the device. Our “Solid-state Laser Annealing System” meets such demands, which is now mainly used for mass-production of high performance image sensors. We are also engaging in R&D activities in order to expand the application of our system.
 

• Pulse green laser adjustable from pulse duration 250ns to 1,200ns
• Deep activation up to 3μm
• Temperature monitoring (thermal radiation type)

• Combination of a pulse-duration-adjustable green laser and a preheating near-infrared laser
• Double activation of both B and P dopants
• Deep activation overcfor IGBT
• Deep melting, recrystallization, and recovery over a depth of 3μm
• Low thermal budget annealing process